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Group: 2D Materials (2D)

Home Group: 2D Materials (2D)

The 2D Materials Technical Group organizes 7 oral sessions from Tuesday through Friday. A total of 9 renowned invited speakers in their fields will share recent progress in 2D-materials synthesis, properties, characterization, and applications. Tuesday’s morning session will focus on the synthesis and processing of 2D materials and their heterostructures. Tuesday afternoon session will explore the electronic properties of 2D materials using surface science techniques with a special focus on exploiting topological and quantum phenomena. Wednesday morning program explores the synthesis of 2D-based heterostructures, twistronics, and proximity effects while the afternoon session focuses on electronic 2D device applications. On Thursday morning, we will explore modifications and new phenomena in 2D materials through doping, defects, and interfaces, while in the afternoon session, potential applications of 2D materials will be discussed. Finally, on Friday the discussion will focus on 2D materials for NEMS and strain engineering.

2D+AP+EM+QS+SS+TF-TuM: 2D Materials: Synthesis and Processing

  • Andrey Turchanin, Friedrich Schiller University Jena, Germany, “Tailored Growth of Transition Metal Dichalcogenides Monolayers and Their Heterostructures”

2D+LS+NS+SS-TuA: Electronics Properties

  • Aaron Bostwick, Advanced Light Source, Lawrence Berkeley National Laboratory, “NanoARPES for the Study of 2D Materials”
  • Tiancong Zhu, Purdue University, “Manipulation of Chiral Interface States in a Moiré Quantum Anomalous Hall Insulator”

2D+EM+MI+QS-WeM: 2D Materials: Heterostructures, Twistronics, and Proximity Effects

  • Vikram Deshpande, University of Utah, “Spin-Valley Physics in Mixed-Dimensional Van Der Waals Heterostructures”
  • Young Hee Lee, Sungkyunkwan University, Republic of Korea, “Recent Progresses in van der Waals Layered Magnetic Semiconductors”
  • Peter Sutter, University of Nebraska – Lincoln, “Van der Waals Semiconductors: From Stacking-Controlled Crystals to Unconventional Heterostructures”

2D-WeA: 2D Materials: Sensors and Devices

  • Susan Fullerton Shirey, University of Pittsburgh, “Electric-Field-Sensitive Polymer Electrolytes for Non-Volatile Doping of Two-Dimensional Field-Effect Transistors”
  • Young-Jun Yu, Chungnam National University, Republic of Korea, “Ultra-Low Energy Consumption Memory Study Using 2D Materials Heterostructures”

2D-ThM: 2D Materials: Defects, Dopants, Edges, Functionalization, and Intercalation

  • 2D+EM+QS-ThA: 2D Materials: Applications

2D-ThP: 2D Materials Poster Session

2D+EM+MN+TF-FrM: 2D NEMS and Strain Engineering

  • Arkady Krasheninnikov, Helmholtz Zentrum Dresden-Rossendorf, Germany, “Engineering the Structure and Properties of 2D Materials by Defects, Strain and Intercalation”

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Key Dates

Major Awards Deadline:
March 31, 2024

Student Awards Deadline:
May 13, 2024

Late-Breaking Abstract Submission Deadline:
September 5, 2024

Early Registration Deadline:
October 2, 2024

Hotel Deadline:
October 16, 2024

Contact

Yvonne Towse
Conference Administrator
125 Maiden Lane; Suite 15B
New York, N.Y. 10038
yvonne@avs.org

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